gate electrode
英 [ɡeɪt ɪˈlektrəʊd]
美 [ɡeɪt ɪˈlektroʊd]
网络 栅电极; 栅极; 低阻闸极; 闸极; 栅极电极
双语例句
- In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.
实际中，这个特性总是用来定义MOS晶体管的闸极电极走线。 - Most of the radiation is not energetic enough to penetrate the gate electrode, so damage is confined to the periphery of that electrode.
大多数辐射没有足够的能量来穿透栅电极，因此，损伤被限制在电极的周围。 - The protection circuit on the input end has a gate electrode comprised of a band-like conductive film.
输入端的保护电路有由带状导电膜组成的栅电极。 - So the name of a process became identified with the width of the gate electrode.
所以，制程的名字就用来标识闸电极的宽度。 - The diameter, height and voltage of the gate electrode are changed to analyze the influence on the electric field and the electron trajectory in the triode.
结合等位线及电子轨迹分析了聚焦栅极的高度、开口半径、电位等诸多因素对于电场分布以及电子注聚焦的影响。 - Effects of Nitrogen Implantation into Gate Electrode on Characteristics of Ultra-Thin Gate Oxide
氮注入多晶硅栅对超薄SiO2栅介质性能的影响 - A Solid Static INHIBIT Logic Gate Based on Spiropyran LB Film Sensitized Semiconductor Electrode
基于螺吡喃LB膜修饰电极的固态INHIBIT逻辑门 - The relation ship between operation characteristics and structure of a schottky type gate electrode organic static induction transistor with Au/ CuPc/ Al/ CuPc/ Au sandwich structure is analyzed.
根据Au/CuPc/Al/CuPc/Au三明治结构的肖特基型栅极有机静电感应三极管的测试结果，分析了该三极管动作特性与器件结构的关系。 - The simulation presents the gate delay and the maximum charge on unit pixel, both as the function of diagonal sige and display resolution, regarding gate electrode made from various metal materials.
计算了用典型金属材料作栅电极时，在栅线的不同位置上，象素电容的最大充电能力与栅延迟，为大面积、高分辨率TFTLCD提供了设计依据。 - The asymmetry isolation layer between the source/ drain electrodes and the gate used in the experiment results in asymmetric mod-ulation of gate electrostatic field to source electrode and drain electrode. Therefore solo gate electrostatic field modulation to the drain electrode is realized.
实验中采用了源/漏电极不对称的绝缘层结构，使得门电压对源漏两极的电场调制也不对称，从而实现了对漏电极的门电压调制。 - This paper studies MIS type solid state oxygen sensor with LaF 3 gate electrode working at room temperature. The mechanism of the sensor is analysed.
本文研究可在室温下工作，具有LaF3（氟化镧）薄膜的MIS（金属绝缘体半导体）型固态氧传感器，并对其敏感机制进行了讨论。 - The addition of La 3+ or Ca 2+ ions can regulate the ion gate which responses the Fe ( CN) 3-6 reduction on electrode.
当溶液中加入La3＋或Ca2＋时，Fe（CN）3－6离子穿透膜的能力得到改善。 - The space spread function of the TFFEC is also evaluated when it is used in flat panel display device and that depends on the distance between anode and gate electrode, voltage of gate strongly.
应用TFFEC的新型平板显示系统，其空间分辨能力与阳栅距、栅极电压有很大关系。 - Using the high-quality mica plate as substrate materials, a new gate electrode structure was fabricated successfully with silver slurry and simple screen-printing process.
利用优质云母板作为栅极结构基底材料，结合简单的丝网印刷工艺将导电银浆制作成条状栅极，制作了新型的栅极结构； - Effect of La 3+ and Ca 2+ on Ion Gate of the Glutathione Monolayer Gold Electrode
La~（3＋）和Ca~（2＋）对金电极上谷胱甘肽单分子膜离子闸门的影响 - The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。 - After adding the additional gate electrode in the normal-gate CNT field emission triode, we have observed that it captures most of ions which are produced near the cathode, so the effect of the ion bombardment is greatly lightened with the structure of ion trap.
在normal-gateCNT场发射三极管模型中加入附加电极构造离子陷阱后，捕获了大部分在距离阴极较近的位置产生的正离子，从而到达改善离子轰击问题的目的。 - A series of optimization based on the original structure are made: to remove the air bridge technology, to change the location of gate electrode leads, and to consider the relationship of piezoresistive coefficient and crystal.
在原有版图的基础上做了一系列优化：去掉了空气桥工艺，改变了栅电极引出位置，并考虑了压阻系数与晶向的关系。 - The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。